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| PN3638 / PN3638A Discrete POWER & Signal Technologies PN3638 PN3638A C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Collector-Emitter Voltage Value 25 25 4.9 800 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN3638/A 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation PN3638 / PN3638A PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES Collector-Emitter Breakdown Voltage* Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current I C = 10 mA, IB = 0 I C = 100 A, I B = 0 I C = 10 A, I E = 0 I E = 10 A, I C = 0 VCE = 15 V, I E = 0 VCE = 15 V, I E = 0, TA = 65 C 25 25 25 4.0 35 2.0 V V V V nA A ON CHARACTERISTICS* hFE DC Current Gain VCE = 1.0 V, I C = 50 mA PN3638 PN3638A VCE = 2.0 V, I C = 300 mA PN3638 PN3638A VCE = 10 V, IC = 100 mA PN3638 PN3638A VCE = 10 V, IC = 1.0 mA PN3638A IC = 50 mA, IB = 2.5 mA IC = 300 mA, IB = 30 mA IC = 50 mA, IB = 2.5 mA IC = 300 mA, IB = 30 mA 30 100 30 20 20 80 100 0.25 1.0 1.1 2.0 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.8 SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, f = 1.0 MHz PN3638 PN3638A VBE = 0.5 V, f = 1.0 MHz PN3638 PN3638A IC = 50 mA, VCE = 3.0 V, PN3638 f = 100 MHz PN3638A IC = 10 mA, VCE = 10 V, f = 1.0 kHz PN3638 PN3638A IC = 10 mA, VCE = 10 V, f = 1.0 kHz PN3638 PN3638A 20 10 65 25 1.0 1.5 25 100 2.0 1.2 26 15 k mhos x10 -4 x10 -4 pF pF pF pF Cib Input Capacitance hfe Small-Signal Current Gain hie hoe hre Input Impedance Output Admittance Voltage Feedback Ratio SWITCHING CHARACTERISTICS ton td tr toff ts tf Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time VCC = 10 V, IC = 300 mA I B1 = I B2 = 30 mA VCC = 10 V, IC = 300 mA, IB1 = 30 mA 75 20 70 170 140 70 ns ns ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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